Plenary Presentation by Emeritus Professor Anthony Parker
Talk Abstract: Energy-based Modelling of HEMTs for Microwave Applications
A physics-inspired approach to HEMT modelling for circuit design is describe. The goal is speeding up design time by providing a single comprehensive empirical model suitable for all aspects of circuit operation. To achieve this, even for GaN, the salient physics underpinning each of the many device characteristics and dependencies must be captured within an efficient empirical formulation.
In addition to terminal potentials, the many dimensions of HEMT operation include frequency, temperature, trap potentials, and layout geometry. Device characterisation presents a challenge with significant multi-dimensional complexity. The problem is simplified with a correlation between temperature, charge and current that is developed with an application of principles of energy, Boltzmann transport, and thermal conduction.
Using energy as the primary state variable, rather than charge and current, resolves many issues. It is shown that drift and diffusion are just aspects energy gradient dependence. Also, the concept of formation energy is introduced to resolve the charge conservation. Underpinning the model with correct thermal impedance, trap potentials, and access metal is also key to accuracy and scalability. When correctly implement, the resulting model extrapolates well beyond the temperature, frequency, and bias domains to which is fitted.
Bio:
Emeritus Professor Anthony E. Parker (S’84–M’90–SM’95) received the B.Sc., B.E., and Ph.D. degrees from The University of Sydney, Sydney, NSW, Australia, in 1983, 1985, and 1992, respectively.
He joined Macquarie University, Sydney, Australia, in 1990 and held a professorial position within the School of Engineering, which he led during its foundation. He co-founded the Macquarie/Analog Devices, Inc. Research Laboratory (MADlab) in 2017 and continues to contribute as a consultant. His research focus is microwave device and circuit techniques that support the research and commercial design activity in the MADlab. He has interests in characterization of microwave devices, including pulse testing and CAD implementations. His recent work has also involved investigations of scalable models of GaAs and GaN devices for broadband circuits and systems.
He has consulted with several companies including M/A-COM, MA, and Agilent Technologies, CA. He has developed accurate circuit simulation techniques, such as used in FET and HEMT models. This includes a major project on transistor model development of very accurate nonlinear dynamic models of GaN HEMTs. He has authored or co-authored over 210 publications.
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